دیتاشیت BUK752R3-40C,127
مشخصات دیتاشیت
نام دیتاشیت |
BUK752R3-40C
|
حجم فایل |
348.665
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
15
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
40V
-
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 25A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
175nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
11323pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
333W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
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Supplier Device Package:
TO-220AB
-
Package / Case:
TO-220-3
-
Base Part Number:
BUK75
-
detail:
N-Channel 40V 100A (Tc) 333W (Tc) Through Hole TO-220AB